IRLZ24NLPBF
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 55V 18A TO262
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRLZ24NLPBF Datasheet
-
ECAD Model
- Share
In Stock: 136
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:HEXFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):55 V
- Current - Continuous Drain (Id) @ 25°C:18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4V, 10V
- Rds On (Max) @ Id, Vgs:60mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:15 nC @ 5 V
- Vgs (Max):±16V
- Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):3.8W (Ta), 45W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-262
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
