IRFD010PBF
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 50V 1.7A 4DIP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFD010PBF Datasheet
-
ECAD Model
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In Stock: 149
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):50 V
- Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:200mOhm @ 860mA, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):1W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:4-DIP, Hexdip, HVMDIP
- Package / Case:4-DIP (0.300", 7.62mm)
