FQE10N20LCTU
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 4A TO126-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FQE10N20LCTU Datasheet
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ECAD Model
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In Stock: 126
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Technical Details
- Series:QFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):5V, 10V
- Rds On (Max) @ Id, Vgs:360mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:19 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:490 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):12.8W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-126-3
- Package / Case:TO-225AA, TO-126-3
