FQI4N20LTU
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 3.8A I2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FQI4N20LTU Datasheet
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Technical Details
- Series:QFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):5V, 10V
- Rds On (Max) @ Id, Vgs:1.35Ohm @ 1.9A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):3.13W (Ta), 45W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I2PAK (TO-262)
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
