IRLW610ATM
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 3.3A I2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRLW610ATM Datasheet
-
ECAD Model
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In Stock: 191
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Technical Details
- Series:-
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:3.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):5V
- Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.65A, 5V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:9 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:240 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):3.1W (Ta), 33W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I2PAK (TO-262)
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
