HUF75617D3S
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 16A TO252AA
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet HUF75617D3S Datasheet
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ECAD Model
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Technical Details
- Series:UltraFET™
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:90mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:39 nC @ 20 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):64W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-252AA
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
