BSP123E6327T

Technical Details

• Series:SIPMOS®
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:370mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.8V, 10V
• Rds On (Max) @ Id, Vgs:6Ohm @ 370mA, 10V
• Vgs(th) (Max) @ Id:1.8V @ 50µA

• Gate Charge (Qg) (Max) @ Vgs:2.4 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:70 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):1.79W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-SOT223-4
• Package / Case:TO-261-4, TO-261AA