2SK2963(TE12L,F)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 1A PW-MINI
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 2SK2963(TE12L,F) Datasheet
-
ECAD Model
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In Stock: 105
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4V, 10V
- Rds On (Max) @ Id, Vgs:700mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id:2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:6.3 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:140 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):500mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PW-MINI
- Package / Case:TO-243AA
