2SK2221-E
Renesas Electronics America
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 8A TO3P
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 2SK2221-E Datasheet
-
ECAD Model
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In Stock: 120
Can ship immediately
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Technical Details
- Series:-
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):-
- Rds On (Max) @ Id, Vgs:-
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):100W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-3P
- Package / Case:TO-3P-3, SC-65-3
