IPI100N06S3-04
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 55V 100A TO262-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPI100N06S3-04 Datasheet
-
ECAD Model
- Share
In Stock: 123
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:OptiMOS™
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):55 V
- Current - Continuous Drain (Id) @ 25°C:100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:4.4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:314 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:14230 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):214W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO262-3
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
