2N7000G
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 200MA TO92-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 2N7000G Datasheet
-
ECAD Model
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):350mW (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-92-3
- Package / Case:TO-226-3, TO-92-3 (TO-226AA)
