NTS2101PT1

Technical Details

• Series:-
• Package:Tape & Reel (TR)
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):8 V
• Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:100mOhm @ 1A, 4.5V
• Vgs(th) (Max) @ Id:700mV @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:640 pF @ 8 V
• FET Feature:-
• Power Dissipation (Max):290mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SC-70-3 (SOT323)
• Package / Case:SC-70, SOT-323