SI1305DL-T1-E3

Vishay / Siliconix
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Technical Details

  • Series:TrenchFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Obsolete
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):8 V
  • Current - Continuous Drain (Id) @ 25°C:860mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:280mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id:450mV @ 250µA (Min)

 

  • Gate Charge (Qg) (Max) @ Vgs:4 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):290mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SC-70-3
  • Package / Case:SC-70, SOT-323

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