SI2309DS-T1-E3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 60V 1.25A SOT23-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI2309DS-T1-E3 Datasheet
-
ECAD Model
- Share
In Stock: 179
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:1.25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:340mOhm @ 1.25A, 10V
- Vgs(th) (Max) @ Id:1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:-
- FET Feature:-
- Power Dissipation (Max):1.25W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-23-3 (TO-236)
- Package / Case:TO-236-3, SC-59, SOT-23-3
