SI3475DV-T1-E3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 200V 950MA 6TSOP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI3475DV-T1-E3 Datasheet
-
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:950mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:1.61Ohm @ 900mA, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):2W (Ta), 3.2W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:6-TSOP
- Package / Case:SOT-23-6 Thin, TSOT-23-6
