SI5857DU-T1-E3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 6A PPAK CHIPFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI5857DU-T1-E3 Datasheet
-
ECAD Model
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In Stock: 182
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Technical Details
- Series:LITTLE FOOT®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:58mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 10 V
- FET Feature:Schottky Diode (Isolated)
- Power Dissipation (Max):2.3W (Ta), 10.4W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PowerPAK® ChipFet Dual
- Package / Case:PowerPAK® ChipFET™ Dual
