SUM33N20-60P-E3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 33A TO263
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SUM33N20-60P-E3 Datasheet
-
ECAD Model
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V, 15V
- Rds On (Max) @ Id, Vgs:59mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id:4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:113 nC @ 15 V
- Vgs (Max):±25V
- Input Capacitance (Ciss) (Max) @ Vds:2735 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):3.12W (Ta), 156W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-263 (D2Pak)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
