NTD4860N-35G
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 25V 10.4A/65A IPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NTD4860N-35G Datasheet
-
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Technical Details
- Series:-
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):25 V
- Current - Continuous Drain (Id) @ 25°C:10.4A (Ta), 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:7.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:16.5 nC @ 4.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1308 pF @ 12 V
- FET Feature:-
- Power Dissipation (Max):1.28W (Ta), 50W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I-PAK
- Package / Case:TO-251-3 Stub Leads, IPak
