IRLR4343-701PBF
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 55V 26A IPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRLR4343-701PBF Datasheet
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ECAD Model
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In Stock: 189
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Technical Details
- Series:HEXFET®
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):55 V
- Current - Continuous Drain (Id) @ 25°C:26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:50mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):79W (Tc)
- Operating Temperature:-40°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:I-PAK (LF701)
- Package / Case:TO-252-4, DPak (3 Leads + Tab)
