FDC636P
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 20V 2.8A SUPERSOT6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FDC636P Datasheet
-
ECAD Model
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In Stock: 149
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:130mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 4.5 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:390 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):1.6W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SuperSOT™-6
- Package / Case:SOT-23-6 Thin, TSOT-23-6
