APTM120U10DAG
Microsemi
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 1200V 160A SP6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet APTM120U10DAG Datasheet
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):1200 V
- Current - Continuous Drain (Id) @ 25°C:160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:120mOhm @ 58A, 10V
- Vgs(th) (Max) @ Id:5V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs:1100 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:28900 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):3290W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Chassis Mount
- Supplier Device Package:SP6
- Package / Case:SP6