IRF6710S2TR1PBF

IR (Infineon Technologies)
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Technical Details

  • Series:HEXFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta), 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5.9mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 25µA

 

  • Gate Charge (Qg) (Max) @ Vgs:13 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1190 pF @ 13 V
  • FET Feature:-
  • Power Dissipation (Max):1.8W (Ta), 15W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:DIRECTFET S1
  • Package / Case:DirectFET™ Isometric S1

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