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Technical Details

  • Series:HEXFET®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:3.4A (Ta), 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:100mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id:5V @ 100µA

 

  • Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):2.8W (Ta), 57W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:DIRECTFET™ MZ
  • Package / Case:DirectFET™ Isometric MZ

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