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Technical Details

  • Series:HEXFET®
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):100 V
  • Current - Continuous Drain (Id) @ 25°C:6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:480mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 48W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-262
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA

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