IRLBD59N04ETRLP

IR (Infineon Technologies)
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Technical Details

  • Series:HEXFET®
  • Package:Tape & Reel (TR)
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:18mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:50 nC @ 5 V
  • Vgs (Max):±10V
  • Input Capacitance (Ciss) (Max) @ Vds:2190 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):130W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263-5
  • Package / Case:TO-263-6, D²Pak (5 Leads + Tab), TO-263BA

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