FQPF9N50CYDTU

ON Semiconductor
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Technical Details

  • Series:QFET®
  • Package:Tube
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:800mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1030 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):44W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220F-3 (Y-Forming)
  • Package / Case:TO-220-3 Full Pack, Formed Leads

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