FDB12N50UTM_WS
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 500V 10A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FDB12N50UTM_WS Datasheet
-
ECAD Model
- Share
In Stock: 178
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:FRFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):500 V
- Current - Continuous Drain (Id) @ 25°C:10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:800mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:1395 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):165W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D²PAK
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
