SIA443DJ-T1-GE3

Vishay / Siliconix
In Stock: 185

Can ship immediately

Pricing:

Call for price or sumbit a RFQ

Quote It

Technical Details

  • Series:TrenchFET®
  • Package:Tape & Reel (TR)
  • Part Status:Obsolete
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:45mOhm @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:25 nC @ 8 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:750 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):3.3W (Ta), 15W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SC-70-6 Single
  • Package / Case:PowerPAK® SC-70-6

Related Products


SIA450DJ-T1-GE3

MOSFET N-CH 240V 1.52A PPAK

SIA450DJ-T1-GE3 Datasheet

Call for price


SIA811DJ-T1-GE3

MOSFET P-CH 20V 4.5A PPAK SC70-6

SIA811DJ-T1-GE3 Datasheet

Call for price


SIB412DK-T1-GE3

MOSFET N-CH 20V 9A PPAK SC75-6

SIB412DK-T1-GE3 Datasheet

Call for price


SI1046R-T1-GE3

MOSFET N-CH 20V SC75A

SI1046R-T1-GE3 Datasheet

Call for price


SI1046X-T1-GE3

MOSFET N-CH 20V SC89-3

SI1046X-T1-GE3 Datasheet

Call for price


SI1051X-T1-GE3

MOSFET P-CH 8V 1.2A SC89-6

SI1051X-T1-GE3 Datasheet

Call for price


SI1054X-T1-GE3

MOSFET N-CH 12V 1.32A SC89-6

SI1054X-T1-GE3 Datasheet

Call for price


SI1069X-T1-GE3

MOSFET P-CH 20V 0.94A SC89-6

SI1069X-T1-GE3 Datasheet

Call for price


SI1073X-T1-GE3

MOSFET P-CH 30V 0.98A SC89-6

SI1073X-T1-GE3 Datasheet

Call for price


SI2305ADS-T1-GE3

MOSFET P-CH 8V 5.4A SOT23-3

SI2305ADS-T1-GE3 Datasheet

Call for price


Top