SI5475DDC-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 12V 6A 1206-8
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI5475DDC-T1-GE3 Datasheet
-
ECAD Model
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In Stock: 175
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):12 V
- Current - Continuous Drain (Id) @ 25°C:6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:32mOhm @ 5.4A, 4.5V
- Vgs(th) (Max) @ Id:1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:50 nC @ 8 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 6 V
- FET Feature:-
- Power Dissipation (Max):2.3W (Ta), 5.7W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:1206-8 ChipFET™
- Package / Case:8-SMD, Flat Lead
