SIA814DJ-T1-GE3

Vishay / Siliconix
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Technical Details

  • Series:LITTLE FOOT®
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Rds On (Max) @ Id, Vgs:61mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:340 pF @ 10 V
  • FET Feature:Schottky Diode (Isolated)
  • Power Dissipation (Max):1.9W (Ta), 6.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SC-70-6 Dual
  • Package / Case:PowerPAK® SC-70-6 Dual

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