SI4110DY-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 80V 17.3A 8SO
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI4110DY-T1-GE3 Datasheet
-
ECAD Model
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):80 V
- Current - Continuous Drain (Id) @ 25°C:17.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:13mOhm @ 11.7A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2205 pF @ 40 V
- FET Feature:-
- Power Dissipation (Max):3.6W (Ta), 7.8W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SO
- Package / Case:8-SOIC (0.154", 3.90mm Width)
