TPC6006-H(TE85L,F)
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 40V 3.9A VS-6
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TPC6006-H(TE85L,F) Datasheet
-
ECAD Model
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In Stock: 176
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Technical Details
- Series:U-MOSIII-H
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):40 V
- Current - Continuous Drain (Id) @ 25°C:3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:75mOhm @ 1.9A, 10V
- Vgs(th) (Max) @ Id:2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:4.4 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:251 pF @ 10 V
- FET Feature:-
- Power Dissipation (Max):700mW (Ta)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:VS-6 (2.9x2.8)
- Package / Case:SOT-23-6 Thin, TSOT-23-6
