NTLJS1102PTBG
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 8V 3.7A 6WDFN
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NTLJS1102PTBG Datasheet
-
ECAD Model
- Share
In Stock: 195
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:-
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):8 V
- Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:36mOhm @ 6.2A, 4.5V
- Vgs(th) (Max) @ Id:720mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:25 nC @ 4.5 V
- Vgs (Max):±6V
- Input Capacitance (Ciss) (Max) @ Vds:1585 pF @ 4 V
- FET Feature:-
- Power Dissipation (Max):700mW (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:6-WDFN (2x2)
- Package / Case:6-WDFN Exposed Pad
