STI11NM60ND
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 10A I2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet STI11NM60ND Datasheet
-
ECAD Model
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In Stock: 136
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Technical Details
- Series:FDmesh™ II
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:450mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
- Vgs (Max):±25V
- Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):90W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I2PAK
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
