IRFN214BTA_FP001
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 250V 600MA TO92-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFN214BTA_FP001 Datasheet
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Technical Details
- Series:-
- Package:Tape & Box (TB)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):250 V
- Current - Continuous Drain (Id) @ 25°C:600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:275 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):1.8W (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-92-3
- Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
