RDN100N20FU6

ROHM Semiconductor
In Stock: 166

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Obsolete
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:360mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA

 

  • Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:543 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):35W (Tc)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220FN
  • Package / Case:TO-220-3 Full Pack

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