IPB05CN10N G
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 100A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPB05CN10N G Datasheet
-
ECAD Model
- Share
In Stock: 178
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:5.1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:181 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:12000 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):300W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D²PAK (TO-263AB)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
