IPI26CN10N G
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 35A TO262-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPI26CN10N G Datasheet
-
ECAD Model
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In Stock: 133
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Technical Details
- Series:OptiMOS™
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:26mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id:4V @ 39µA
- Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2070 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):71W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO262-3
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
