STD6NM60N-1
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 4.6A IPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet STD6NM60N-1 Datasheet
-
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Technical Details
- Series:MDmesh™ II
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:920mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
- Vgs (Max):±25V
- Input Capacitance (Ciss) (Max) @ Vds:420 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):45W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I-PAK
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
