2SJ656
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 100V 18A TO220ML
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 2SJ656 Datasheet
-
ECAD Model
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In Stock: 195
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4V, 10V
- Rds On (Max) @ Id, Vgs:75.5mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:4200 pF @ 20 V
- FET Feature:-
- Power Dissipation (Max):2W (Ta), 30W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220ML
- Package / Case:TO-220-3 Full Pack
