SSM3K35MFV(TPL3)

Technical Details

• Series:π-MOSVI
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:180mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.2V, 4V
• Rds On (Max) @ Id, Vgs:3Ohm @ 50mA, 4V
• Vgs(th) (Max) @ Id:1V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:9.5 pF @ 3 V
• FET Feature:-
• Power Dissipation (Max):150mW (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:VESM
• Package / Case:SOT-723