SSM3J108TU(TE85L)

Technical Details

• Series:U-MOSIII
• Package:Tape & Reel (TR)
• Part Status:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4V
• Rds On (Max) @ Id, Vgs:158mOhm @ 800mA, 4V
• Vgs(th) (Max) @ Id:1V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):500mW (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:UFM
• Package / Case:3-SMD, Flat Lead