IPI120N06S4H1AKSA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 120A TO262-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPI120N06S4H1AKSA1 Datasheet
-
ECAD Model
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In Stock: 199
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Technical Details
- Series:OptiMOS™
- Package:Tube
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.4mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs:270 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:21900 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):250W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO262-3-1
- Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
