IPB021N06N3GATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 120A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPB021N06N3GATMA1 Datasheet
-
ECAD Model
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In Stock: 153
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Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.1mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:4V @ 196µA
- Gate Charge (Qg) (Max) @ Vgs:275 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:23000 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):250W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D²PAK (TO-263AB)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
