IRF6709S2TR1PBF
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 25V 12A DIRECTFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRF6709S2TR1PBF Datasheet
-
ECAD Model
- Share
In Stock: 176
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:HEXFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):25 V
- Current - Continuous Drain (Id) @ 25°C:12A (Ta), 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:7.8mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1010 pF @ 13 V
- FET Feature:-
- Power Dissipation (Max):1.8W (Ta), 21W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DIRECTFET S1
- Package / Case:DirectFET™ Isometric S1
