IRFR9N20DTRPBF
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 9.4A DPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFR9N20DTRPBF Datasheet
-
ECAD Model
- Share
In Stock: 134
Can ship immediately
Pricing:
- 1$1.01
- 2,000$0.48125
- 6,000$0.45719
- 10,000$0.44
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Technical Details
- Series:HEXFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:9.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:380mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id:5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:560 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):86W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D-Pak
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
