SI4778DY-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 25V 8A 8SO
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI4778DY-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 128
Can ship immediately
Pricing:
Call for price or sumbit a RFQ
Quote It
Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):25 V
- Current - Continuous Drain (Id) @ 25°C:8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:23mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
- Vgs (Max):±16V
- Input Capacitance (Ciss) (Max) @ Vds:680 pF @ 13 V
- FET Feature:-
- Power Dissipation (Max):2.4W (Ta), 5W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:8-SO
- Package / Case:8-SOIC (0.154", 3.90mm Width)
