SIE836DF-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 200V 18.3A 10POLARPK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIE836DF-T1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 163
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:18.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:130mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):5.2W (Ta), 104W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:10-PolarPAK® (SH)
- Package / Case:10-PolarPAK® (SH)
