SI2311DS-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET P-CH 8V 3A SOT23-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI2311DS-T1-GE3 Datasheet
-
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Technical Details
- Series:TrenchFET®
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):8 V
- Current - Continuous Drain (Id) @ 25°C:3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:45mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id:800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
- Vgs (Max):±8V
- Input Capacitance (Ciss) (Max) @ Vds:970 pF @ 4 V
- FET Feature:-
- Power Dissipation (Max):710mW (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-23-3
- Package / Case:TO-236-3, SC-59, SOT-23-3
