SI3812DV-T1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 20V 2A 6TSOP
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SI3812DV-T1-GE3 Datasheet
-
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Technical Details
- Series:LITTLE FOOT®
- Package:Tape & Reel (TR)
- Part Status:Obsolete
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):20 V
- Current - Continuous Drain (Id) @ 25°C:2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:125mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id:600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:4 nC @ 4.5 V
- Vgs (Max):±12V
- Input Capacitance (Ciss) (Max) @ Vds:-
- FET Feature:Schottky Diode (Isolated)
- Power Dissipation (Max):830mW (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:6-TSOP
- Package / Case:SOT-23-6 Thin, TSOT-23-6
